Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
- Autores: Musaev A.1
-
Afiliações:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- Edição: Volume 50, Nº 10 (2016)
- Páginas: 1352-1355
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198072
- DOI: https://doi.org/10.1134/S1063782616100171
- ID: 198072
Citar
Resumo
A possible mechanism for natural-microplasma turn-off in silicon p–n junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
Sobre autores
A. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
Autor responsável pela correspondência
Email: akhmed-musaev@yandex.ru
Rússia, ul. Yaragskogo 94, Makhachkala, 367003