Mechanism of microplasma turn-off upon the avalanche breakdown of silicon p–n structures
- 作者: Musaev A.1
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隶属关系:
- Amirkhanov Institute of Physics, Dagestan Scientific Center
- 期: 卷 50, 编号 10 (2016)
- 页面: 1352-1355
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/198072
- DOI: https://doi.org/10.1134/S1063782616100171
- ID: 198072
如何引用文章
详细
A possible mechanism for natural-microplasma turn-off in silicon p–n junctions is studied. It is shown that the turn-off effect is not a random process, but is based on a certain physical mechanism. The mechanism is associated with the formation of graded-gap regions caused by thermoelastic stresses and electric- field redistribution in the microplasma region.
作者简介
A. Musaev
Amirkhanov Institute of Physics, Dagestan Scientific Center
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Email: akhmed-musaev@yandex.ru
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