Electroluminescence properties of LEDs based on electron-irradiated p-Si
- Авторлар: Sobolev N.1, Shtel’makh K.1,2, Kalyadin A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1, Yang D.3
-
Мекемелер:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
- Шығарылым: Том 50, № 2 (2016)
- Беттер: 252-256
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196816
- DOI: https://doi.org/10.1134/S106378261602024X
- ID: 196816
Дәйексөз келтіру
Аннотация
The electroluminescence (EL) in n+–p–p+ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.
Авторлар туралы
N. Sobolev
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
K. Shtel’makh
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021; St. Petersburg, 195251
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
D. Yang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
Email: nick@sobolev.ioffe.rssi.ru
ҚХР, Hangzhou, 310027