Electroluminescence properties of LEDs based on electron-irradiated p-Si
- 作者: Sobolev N.1, Shtel’makh K.1,2, Kalyadin A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1, Yang D.3
-
隶属关系:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
- 期: 卷 50, 编号 2 (2016)
- 页面: 252-256
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196816
- DOI: https://doi.org/10.1134/S106378261602024X
- ID: 196816
如何引用文章
详细
The electroluminescence (EL) in n+–p–p+ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.
作者简介
N. Sobolev
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
K. Shtel’makh
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021; St. Petersburg, 195251
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
D. Yang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
Email: nick@sobolev.ioffe.rssi.ru
中国, Hangzhou, 310027