Electroluminescence properties of LEDs based on electron-irradiated p-Si
- Autores: Sobolev N.1, Shtel’makh K.1,2, Kalyadin A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1, Yang D.3
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Afiliações:
- Ioffe Physical–Technical Institute
- Peter the Great St. Petersburg Polytechnic University
- State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
- Edição: Volume 50, Nº 2 (2016)
- Páginas: 252-256
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196816
- DOI: https://doi.org/10.1134/S106378261602024X
- ID: 196816
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Resumo
The electroluminescence (EL) in n+–p–p+ light-emitting-diode (LED) structures based on Si irradiated with electrons and annealed at high temperature is studied. The LEDs are fabricated by the chemical- vapor deposition of polycrystalline silicon layers doped with high concentrations of boron and phosphorus. Transformation of the EL spectra with current in the LEDs is well described by six Gaussian curves. The peak positions of these curves are current-independent and equal to 1233, 1308, 1363, 1425, 1479, and 1520 nm. The dependences of the integrated EL intensity and of the full-width at half-maximum (FWHM) of the lines on current are examined.
Sobre autores
N. Sobolev
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
K. Shtel’makh
Ioffe Physical–Technical Institute; Peter the Great St. Petersburg Polytechnic University
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021; St. Petersburg, 195251
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
D. Yang
State Key Laboratory of Silicon Materials and Department of Materials Science and Engineering
Email: nick@sobolev.ioffe.rssi.ru
República Popular da China, Hangzhou, 310027