卷 46, 编号 3 (2017)
- 年: 2017
- 文章: 12
- URL: https://journals.rcsi.science/1063-7397/issue/view/11663
Article
Stability analysis of monolithic integrated circuit of microwave signal converter to the influence of special factors
摘要
The research results of the resistance of signal converters with the operating frequency of 57–64 GHz, manufactured at the Institute of Ultrahigh Frequency Semiconductor Electronics on AlGaN/GaN/Al2O3 heterostructures to the action of special factors such as neutron and gamma radiation are presented. The results of evaluation of the long-term stability of the signal converters at high temperature are also discussed. The possible physical mechanisms of the changing characteristics are considered.
Methods of functional-logic simulation of radiation-induced failures of electronic systems based on the fuzzy state machine model
摘要
The methods of functional-logic simulation of radiation-induced failures of electronic systems based on the Brauer fuzzy state machine model are presented. Recommendations for methods of radiationinduced failure prediction in the electronic component base are given. Theoretical and experimental results for the radiation fault tolerance of 1617 large-scale integrated circuits based on complementary metal–oxide–semiconductor structures are given as an example.
Simulation of impact of the HCP on the CNT-nanosensor by the molecular dynamics method
摘要
The impact of heavy charged particles (HCPs) on a carbon nanotube (CNT)-nanostructure was simulated by the molecular dynamics method. The results point to the high sensitivity of nanoscale sensors to the local effects caused by the impact of HCPs.
Specifics of electromagnetic radiation effects on integrated circuits
摘要
Modern regulations [1] stress the necessity of testing integrated circuits (ICs) in order to determine the real level of their resistance to single voltage pulses induced by electromagnetic radiation (EMR). With expansion of the EMR spectral composition, however, direct energy release can occur due to the absorption of the EMR field energy by the IC chip itself. To assess this possibility, the relationship is found between different mechanisms of the EMR-induced energy release for the typical irradiation geometry.
Functional testing of digital signal processors in radiation experiments
摘要
This paper analyzes the specifics of digital signal processors’ (DSPs) radiation-induced failures. The general methodology, as well as the hardware and software, for the functional testing (FT) of DSPs in radiation experiments is developed and implemented. The experimental results are presented to demonstrate the effectiveness of the solutions proposed.
Resistive switching in mesoscopic heterostructures based on Nd2–xCexCuO4–y epitaxial films
摘要
Reversible and stable bistable resistive switching were observed in planar-type junctions Nd2–xCexCuO4–y/Nd2–xCexO1.75/Ag. It was shown that current transport in such junctions has a diode character with Schottky-like barriers in highly doped semiconductors. It was revealed that the key factor for switching is the presence of the second phase Nd2–xCexO1.75, deficient in oxygen, epitaxially germinated at the Nd2–xCexCuO4–y surface.
Study of transient processes in a p-i-n photodetector using the nonstationary physical-topological model
摘要
We developed a nonstationary diffusion-drift physico-topological model of a GaAs p-i-n photodetector for operation as an element of an optical switch integrated circuit, together with a high-speed injection laser based on a double heterostructure with a functionally integrated radiation modulator.
Graphene flexible touchscreen with integrated analog-digital converter
摘要
The possibilities of developing a projection-capacitance touchscreen which aligns sensors and an analog-digital converter produced from the material based on graphene have been considered. The alignment of these two elements will make it possible to implement a touchscreen with digital signals at the output contacts which will make it possible to connect it to the integrated logical circuits of the control system. The touchscreen is a film with a thickness of 100–150 micrometers with alternating graphene layers, which transmit 6–8% more light than a projection-capacitance screen from indium and stanum oxides. The screen is highly flexible, is mechanically hard, and the materials—saccharose, copper foil, boron nitride (BN), etc.—used to fabricate it potentially cost less. This is achieved by the application of a complex of the known methods used to obtain films from two-dimensional materials based on graphene of a preset configuration on flexible polymer substrates and a single construction of the system for electrical capacitance accumulation in a touchscreen and analog-digital conversion on graphene field-effect transistors.
Partitioning very hard semiconductor sapphire wafers into monolithic integrated circuits using laser controlled thermal cleavage
摘要
The works on the partitioning of very hard semiconductor sapphire wafers with a diameter of 52 mm and thickness of 90 μm into monolithic integrated circuits (MICs) have been carried out using lasercontrolled thermal cleavage (LCT). The studies have been carried out and the works on cutting polycrystalline diamond wafers have been performed, as a result of which a method to partition the wafers into crystals, i.e., the laser plasmochemical method of cutting, is proposed, the basic advantage of which is the absence of the material bursting out from the cutting region and its deposition onto already formed device structures.
Power switching transistors based on gallium nitride epitaxial heterostructures
摘要
The results of the development of power switching transistors based on epitaxial gallium nitride heterostructures to create an energy-efficient conversion technique are presented. The developed powerful GaN transistor operates in enrichment mode with unlocking threshold voltage Vth = +1.2 V and a maximum drain-source current Ids = 0.15 A/mm at the drain-source voltage Vds = +8 V. The drain-source breakdown voltage in the closed state is Vb = 300 V at the drain-source distance Lds = 8.5 μm and drain-source voltage Vds = 0 V.
Effect of Ar and He additives on the kinetics of GaAs etching in CF2Cl2 plasma
摘要
The effect of argon and helium additives on the kinetics of GaAs etching in high-frequency (HF) CF2Cl2 plasma has been analyzed. It is shown that dilution of the CF2Cl2 with argon or helium at a 1: 1 ratio insignificantly decreases the etching rate. An application of the bias power onto a substrate holder leads to
Circuit model for functionally integrated injection laser modulators
摘要
This paper proposes a circuit model for injection lasers with functionally integrated optical-radiation modulators. This model takes into account the design and structural features of the functionally-integrated injection laser modulators (FIILMs), as well as the effect exerted by the spatial distributions of electrons, holes, and photons in the FIILMs’ active region on the behavior of the physical processes there.