| Issue |
Title |
File |
| Vol 63, No 9 (2018) |
Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II |
(Eng)
|
|
Burlakov I.D., Filachev A.M., Kholodnov V.A.
|
| Vol 63, No 9 (2018) |
Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range |
(Eng)
|
|
Voitsekhovskii A.V., Kulchitsky N.A., Nesmelov S.N., Dzyadukh S.M.
|
| Vol 63, No 9 (2018) |
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer |
(Eng)
|
|
Sednev M.V., Boltar K.O., Irodov N.A., Demidov S.S.
|
| Vol 63, No 9 (2018) |
To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes |
(Eng)
|
|
Kholodnov V.A., Burlakov I.D.
|
| Vol 63, No 9 (2018) |
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures |
(Eng)
|
|
Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.
|
| Vol 63, No 3 (2018) |
InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm |
(Eng)
|
|
Dudin A.L., Katsavets N.I., Krasovitsky D.M., Kokin S.V., Chaly V.P., Shukov I.V.
|
| Vol 63, No 3 (2018) |
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements |
(Eng)
|
|
Boltar K.O., Burlakov I.D., Vlasov P.V., Lopukhin A.A., Chaliy V.P., Katsavets N.I.
|
| Vol 63, No 3 (2018) |
Precision Etching of Thin Doped Silicon Layers |
(Eng)
|
|
Borovkova A.Y., Grischina T.N., Matyuhina E.S.
|
| Vol 63, No 3 (2018) |
Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures |
(Eng)
|
|
Budtolaev A.K., Kravchenko N.V., Khakuashev P.E., Chinareva I.V.
|
| Vol 63, No 3 (2018) |
Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal |
(Eng)
|
|
Shabrin A.D., Goncharov A.E., Pashkeev D.A., Lyalikov A.V., Egorov A.V.
|
| Vol 63, No 3 (2018) |
Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers |
(Eng)
|
|
Nikonov A.V., Iakovleva N.I.
|
| Vol 63, No 3 (2018) |
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator |
(Eng)
|
|
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Vasil’ev V.V., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y.
|
| Vol 63, No 3 (2018) |
Long-Term Stability of a 640 × 512 InSb Focal Plane Array with a Pitch of 15 μm |
(Eng)
|
|
Vlasov P.V.
|
| Vol 63, No 3 (2018) |
Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers |
(Eng)
|
|
Komkov O.S., Firsov D.D., Lvova T.V., Sedova I.V., Solov’ev V.A., Semenov A.N., Ivanov S.V.
|
| Vol 63, No 3 (2018) |
Scanning Thermal Imaging Device Based on a Domestic Photodetector Device |
(Eng)
|
|
Kremis I.I., Kalinin V.S., Fedorinin V.N., Korsakov Y.M., Shatunov K.P.
|
| Vol 62, No 3 (2017) |
Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector |
(Eng)
|
|
Baliev D.L., Boltar K.O.
|
| Vol 62, No 3 (2017) |
A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm |
(Eng)
|
|
Borodin D.V., Osipov Y.V., Vasil’ev V.V.
|
| Vol 62, No 3 (2017) |
Epitaxial structures for InGaAs/InP avalanche photodiodes |
(Eng)
|
|
Budtolaev A.K., Khakuashev P.E., Chinareva I.V., Gorlachuk P.V., Ladugin M.A., Marmaluk A.A., Ryaboshtan Y.L., Yarotskaya I.V.
|
| Vol 62, No 3 (2017) |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
(Eng)
|
|
Burlakov I.D., Boltar K.O., Vlasov P.V., Lopukhin A.A., Toropov A.I., Zhuravlev K.S., Fadeev V.V.
|
| Vol 62, No 3 (2017) |
Analysis of the nBn-type barrier structures for infrared photodiode detectors |
(Eng)
|
|
Voitsekhovskii A.V., Gorn D.I.
|
| Vol 62, No 3 (2017) |
Analysis of the spatial distribution of the spectral photosensitivity of focal plane arrays |
(Eng)
|
|
Davletshin R.V., Lazarev P.S., Nikonov A.V.
|
| Vol 62, No 3 (2017) |
Structural properties of cadmium–zinc–tellurium substrates for growth of mercury–cadmiumtellurium solid solutions |
(Eng)
|
|
Pryanikova E.V., Mirofyanchenko A.E., Burlakov I.D., Smirnova N.A., Silina A.A., Grishechkin M.B., Denisov I.A., Shmatov N.I.
|
| Vol 62, No 3 (2017) |
Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures |
(Eng)
|
|
Filatov A.V., Susov E.V., Karpov V.V., Zhilkin V.A., Ljubchenko S.P., Kusnezov N.S., Marushchenko A.V.
|
| Vol 62, No 3 (2017) |
Investigation of spectral dependences of the absorption coefficient in InGaAs layers |
(Eng)
|
|
Iakovleva N.I., Nikonov A.V.
|
| Vol 61, No 10 (2016) |
Photoresistors with the gray code on the CdxHg1 – xTe heteroepitaxial structures for a spectral interval of 2–11 μm with thermoelectric cooling |
(Eng)
|
|
Filatov A.V., Karpov V.V., Susov E.V., Gribanov A.A., Kuznetsov N.S., Petrenko V.I.
|
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