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Experimental investigation and calculation of the spectral dependence of the absorption coefficient of single-layer epitaxial HgCdTe structures
Iakovleva N.I., Nikonov A.V., Shabarov V.V.
A Megapixel Matrix Photodetector of the Middle Infrared Range
Bazovkin V.M., Varavin V.S., Vasil’ev V.V., Glukhov A.V., Gorshkov D.V., Dvoretsky S.A., Kovchavtsev A.P., Makarov Y.S., Marin D.V., Mzhelsky I.V., Polovinkin V.G., Remesnik V.G., Sabinina I.V., Sidorov Y.G., Sidorov G.Y., Stroganov A.S., Tsarenko A.V., Yakushev M.V., Latyshev A.V.
Effect of Surface Recombination on the Parameters of Photodiodes Based on HgCdTe Semiconductor Structures
Iakovleva N.I.
Capacitive Properties of Metal–Insulator–Semiconductor Systems Based on an HgCdTe nBn Structure Grown by Molecular Beam Epitaxy
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Dvoretsky S.A., Mikhailov N.N., Sidorov G.Y., Yakushev M.V.
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures
Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.
Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
Voitsekhovskii A.V., Kulchitsky N.A., Nesmelov S.N., Dzyadukh S.M.
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator
Voitsekhovskii A.V., Nesmelov S.N., Dzyadukh S.M., Vasil’ev V.V., Varavin V.S., Dvoretsky S.A., Mikhailov N.N., Yakushev M.V., Sidorov G.Y.
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