| Шығарылым |
Атауы |
Файл |
| Том 63, № 9 (2018) |
Analytical Description of Avalanche Photodiode Characteristics. An Overview: Part II |
(Eng)
|
|
Burlakov I., Filachev A., Kholodnov V.
|
| Том 63, № 9 (2018) |
Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range |
(Eng)
|
|
Voitsekhovskii A., Kulchitsky N., Nesmelov S., Dzyadukh S.
|
| Том 63, № 9 (2018) |
Current–Voltage Characteristics of n-B-p Structures with Absorbing In0.53Ga0.47As Layer |
(Eng)
|
|
Sednev M., Boltar K., Irodov N., Demidov S.
|
| Том 63, № 9 (2018) |
To the Problem of Optimization of Parameters of a Double Heterostructure Based on Direct-Gap Semiconductors for Avalanche Photodiodes |
(Eng)
|
|
Kholodnov V., Burlakov I.
|
| Том 63, № 9 (2018) |
Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures |
(Eng)
|
|
Iakovleva N., Boltar K., Nikonov A., Egorov A.
|
| Том 63, № 3 (2018) |
Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator |
(Eng)
|
|
Voitsekhovskii A., Nesmelov S., Dzyadukh S., Vasil’ev V., Varavin V., Dvoretsky S., Mikhailov N., Yakushev M., Sidorov G.
|
| Том 63, № 3 (2018) |
Long-Term Stability of a 640 × 512 InSb Focal Plane Array with a Pitch of 15 μm |
(Eng)
|
|
Vlasov P.
|
| Том 63, № 3 (2018) |
Contactless Measurement of Electron Concentration in Undoped Homoepitaxial InSb Layers |
(Eng)
|
|
Komkov O., Firsov D., Lvova T., Sedova I., Solov’ev V., Semenov A., Ivanov S.
|
| Том 63, № 3 (2018) |
Scanning Thermal Imaging Device Based on a Domestic Photodetector Device |
(Eng)
|
|
Kremis I., Kalinin V., Fedorinin V., Korsakov Y., Shatunov K.
|
| Том 63, № 3 (2018) |
InGaAs/AlGaAs QWIP Heterostructures for Large-Format Focal Plane Arrays Photosensitive in the Spectral Range 3–5 μm |
(Eng)
|
|
Dudin A., Katsavets N., Krasovitsky D., Kokin S., Chaly V., Shukov I.
|
| Том 63, № 3 (2018) |
Long-Wave Infrared Focal Plane Arrays Based on a Quantum-Well AlGaAs/GaAs Structure with 384 × 288 Elements |
(Eng)
|
|
Boltar K., Burlakov I., Vlasov P., Lopukhin A., Chaliy V., Katsavets N.
|
| Том 63, № 3 (2018) |
Precision Etching of Thin Doped Silicon Layers |
(Eng)
|
|
Borovkova A., Grischina T., Matyuhina E.
|
| Том 63, № 3 (2018) |
Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures |
(Eng)
|
|
Budtolaev A., Kravchenko N., Khakuashev P., Chinareva I.
|
| Том 63, № 3 (2018) |
Analysis of Misorientation of Single-Crystal Blocks in the Bulk InSb Crystal |
(Eng)
|
|
Shabrin A., Goncharov A., Pashkeev D., Lyalikov A., Egorov A.
|
| Том 63, № 3 (2018) |
Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers |
(Eng)
|
|
Nikonov A., Iakovleva N.
|
| Том 62, № 3 (2017) |
Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector |
(Eng)
|
|
Baliev D., Boltar K.
|
| Том 62, № 3 (2017) |
A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm |
(Eng)
|
|
Borodin D., Osipov Y., Vasil’ev V.
|
| Том 62, № 3 (2017) |
Epitaxial structures for InGaAs/InP avalanche photodiodes |
(Eng)
|
|
Budtolaev A., Khakuashev P., Chinareva I., Gorlachuk P., Ladugin M., Marmaluk A., Ryaboshtan Y., Yarotskaya I.
|
| Том 62, № 3 (2017) |
Photoelectric characteristics of focal plane arrays based on epitaxial layers of indium antimonide deposited on a heavily doped substrate |
(Eng)
|
|
Burlakov I., Boltar K., Vlasov P., Lopukhin A., Toropov A., Zhuravlev K., Fadeev V.
|
| Том 62, № 3 (2017) |
Analysis of the nBn-type barrier structures for infrared photodiode detectors |
(Eng)
|
|
Voitsekhovskii A., Gorn D.
|
| Том 62, № 3 (2017) |
Analysis of the spatial distribution of the spectral photosensitivity of focal plane arrays |
(Eng)
|
|
Davletshin R., Lazarev P., Nikonov A.
|
| Том 62, № 3 (2017) |
Structural properties of cadmium–zinc–tellurium substrates for growth of mercury–cadmiumtellurium solid solutions |
(Eng)
|
|
Pryanikova E., Mirofyanchenko A., Burlakov I., Smirnova N., Silina A., Grishechkin M., Denisov I., Shmatov N.
|
| Том 62, № 3 (2017) |
Independent operation time of photodetectors of the (3—5)-μm spectral band based on InSb and CdHgTe heteroepitaxial structures |
(Eng)
|
|
Filatov A., Susov E., Karpov V., Zhilkin V., Ljubchenko S., Kusnezov N., Marushchenko A.
|
| Том 62, № 3 (2017) |
Investigation of spectral dependences of the absorption coefficient in InGaAs layers |
(Eng)
|
|
Iakovleva N., Nikonov A.
|
| Том 61, № 10 (2016) |
Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride |
(Eng)
|
|
Solyakov V., Bochkov V., Drazhnikov B., Kuznetsov P., Kozlov K.
|
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