Analysis of the  nBn -type barrier structures for infrared photodiode detectors

A. V. Voitsekhovskii; D. I. Gorn

doi:10.1134/S1064226917030214

Analysis of the nBn-type barrier structures for infrared photodiode detectors

Authors: Voitsekhovskii A.V.¹, Gorn D.I.¹
Affiliations:
1. Tomsk State University
Issue: Vol 62, No 3 (2017)
Pages: 314-316
Section: Articles from the Russian Journal Prikladnaya Fizika
URL: https://journals.rcsi.science/1064-2269/article/view/198133
DOI: https://doi.org/10.1134/S1064226917030214
ID: 198133

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Abstract
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Abstract

Modern trends in the technology of Cd_xHg_1–xTe-based photosensitive barrier structures for the middle and far infrared bands, which can operate at near-room temperatures, are analyzed. Main approaches to solving the problem of increasing the photodiode-detector operating temperature have been considered and analyzed.

Keywords

MCT, Cd_xHg_1–xTe, photodetector, barrier structure, nBn

About the authors

A. V. Voitsekhovskii

Tomsk State University

Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050

D. I. Gorn