Principles of an analytical method of optimization of structure parameters of avalanche heterophotodiodes with separated regions of absorption and multiplication

Abstract

Principles of an analytical system of physical design of avalanche heterophotodiodes with separate regions of absorption and multiplication (AHPD with SRAM) are presented. The system is based on analytical expressions for the field of the avalanche breakdown of the p–n heterostructure and the interband tunnel current in it. This current determines the minimum noise level in the AHPD with SRAM based on direct band semiconductors. The considered method strongly facilitates optimization of the doping levels of the heterostructure layers and their thicknesses. In addition, it gives significantly more pronounced physical content to the optimization process.