Email this article Influence of Indirect Transitions on Optical Characteristics of A3B5 Heteroepitaxial Layers
- Authors: Nikonov A.V.1,2, Iakovleva N.I.1
-
Affiliations:
- Orion Research and Production Association
- Moscow Institute of Physics and Technology (State University)
- Issue: Vol 63, No 3 (2018)
- Pages: 277-280
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199576
- DOI: https://doi.org/10.1134/S1064226918030142
- ID: 199576
Cite item
Open Access
Access granted
Subscription Access
Abstract
The influence of indirect transitions of Г-L and Г-Х types in the Brillouin zone on optical and electrophysical characteristics of heteroepitaxial layers of А3В5 compounds is estimated by the example of ternary (InGaAs) and quaternary (InGaAsP) compounds. It has been found that consideration of indirect transitions lowers the refractive index of semiconductor compounds by up to 15% in a narrow wavelength range of 0.4—0.6 μm.
About the authors
A. V. Nikonov
Orion Research and Production Association; Moscow Institute of Physics and Technology (State University)
Author for correspondence.
Email: ech@li.ru
Russian Federation, Moscow, 111538; Dolgoprudnyi, Moscow oblast, 141700
N. I. Iakovleva
Orion Research and Production Association
Email: ech@li.ru
Russian Federation, Moscow, 111538
