Отправить статью по E-mail Methods for Calculation and Control of the Impurity Difference Dose in Avalanche InGaAs/InP Structures
- Авторы: Budtolaev A.K.1, Kravchenko N.V.1, Khakuashev P.E.1, Chinareva I.V.1
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Учреждения:
- Orion Research and Production Association
- Выпуск: Том 63, № 3 (2018)
- Страницы: 306-308
- Раздел: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199634
- DOI: https://doi.org/10.1134/S106422691803004X
- ID: 199634
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Аннотация
Methods for calculation and control of impurity difference dose Qа during the planar procedure of fabrication of avalanche photodiodes (APDs) based on heteroepitaxial InGaAs/InP structures are presented. The developed methods for the difference dose control in avalanche InGaAs/InP structures have been used at various stages of APD fabrication. It has been demonstrated that a tighter impurity dose control from the manufacturer of epitaxial structures, coordination of dose measurement procedures, and correction of diffusion processes for specific impurity doses are needed.
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Об авторах
A. Budtolaev
Orion Research and Production Association
Email: pavel-hak@mail.ru
Россия, Moscow, 111538
N. Kravchenko
Orion Research and Production Association
Email: pavel-hak@mail.ru
Россия, Moscow, 111538
P. Khakuashev
Orion Research and Production Association
Автор, ответственный за переписку.
Email: pavel-hak@mail.ru
Россия, Moscow, 111538
I. Chinareva
Orion Research and Production Association
Email: pavel-hak@mail.ru
Россия, Moscow, 111538
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