Email this article Admittance of MIS Structures Based on MBE Hg1 – xCdxTe (x = 0.21–0.23) in a Wide Temperature Range
- Authors: Voitsekhovskii A.V.1, Kulchitsky N.A.2, Nesmelov S.N.1, Dzyadukh S.M.1
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Affiliations:
- National Research Tomsk State University
- Russian Technological University (MIREA)
- Issue: Vol 63, No 9 (2018)
- Pages: 1112-1118
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/200205
- DOI: https://doi.org/10.1134/S1064226918090231
- ID: 200205
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Abstract
Features of the electrical properties of n(p)-Hg1–xCdxTe (x = 0.21–0.23) with Al2O3 or SiO2/Si3N4 dielectrics are considered. The HgCdTe films were grown by means of molecular beam epitaxy on GaAs(013) and Si(013) substrates. The possibility of determining the basic parameters of MIS structures based on n(p)-Hg1–xCdxTe (x = 0.21–0.23) with and without a varizonal layer from admittance measurements in a wide range of temperatures and frequencies is discussed.
About the authors
A. V. Voitsekhovskii
National Research Tomsk State University
Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
N. A. Kulchitsky
Russian Technological University (MIREA)
Email: vav43@mail.tsu.ru
Russian Federation, Moscow, 119454
S. N. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
S. M. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
