Impact of the Graded-Gap Layer on the Admittance of MIS Structures Based on MBE-Grown n-Hg1 – xCdxTe (x = 0.22–0.23) with the Al2O3 Insulator
- Authors: Voitsekhovskii A.V.1, Nesmelov S.N.1, Dzyadukh S.M.1, Vasil’ev V.V.2, Varavin V.S.2, Dvoretsky S.A.1,2, Mikhailov N.N.2, Yakushev M.V.2, Sidorov G.Y.2
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Affiliations:
- National Research Tomsk State University
- Institute of Semiconductor Physics, Siberian Branch
- Issue: Vol 63, No 3 (2018)
- Pages: 281-284
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/199580
- DOI: https://doi.org/10.1134/S106422691803021X
- ID: 199580
Cite item
Abstract
The impact of the presence of the near-surface graded-gap layers with an increased content of CdTe on the admittance of MIS structures based on MBE-grown n-Hg1–xCdxTe (x = 0.22–0.23) with the Al2O3 insulating coating has been experimentally studied. It has been shown that the structures with a gradedgap layer are characterized by a deeper and wider capacitance dip in the low-frequency capacitance–voltage (CV) characteristic and by higher values of the differential resistance of the space-charge region than the structures without such a layer. It has been found that the main features of the hysteresis of capacitance dependences typical of the graded-gap structures with SiO2/Si3N4 are also characteristic of the MIS structures with the Al2O3 insulator. The factors that cause an increase in the CV characteristic hysteresis upon formation of the graded-gap layer in structures with SiO2/Si3N4 or Al2O3 are still debatable, although it may be assumed that oxygen plays a certain role in formation of this hysteresis.
About the authors
A. V. Voitsekhovskii
National Research Tomsk State University
Author for correspondence.
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
S. N. Nesmelov
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
S. M. Dzyadukh
National Research Tomsk State University
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050
V. V. Vasil’ev
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk, 630090
V. S. Varavin
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk, 630090
S. A. Dvoretsky
National Research Tomsk State University; Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Tomsk, 634050; Novosibirsk, 630090
N. N. Mikhailov
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk, 630090
M. V. Yakushev
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk, 630090
G. Yu. Sidorov
Institute of Semiconductor Physics, Siberian Branch
Email: vav43@mail.tsu.ru
Russian Federation, Novosibirsk, 630090