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Vol 63, No 9 (2018)

Current–Voltage Characteristics of n-B-p Structures with Absorbing In_0.53Ga_0.47As Layer

Sednev M.V., Boltar K.O., Irodov N.A., Demidov S.S.

(Eng)

Vol 61, No 10 (2016)

Investigation of 1024 × 10 multirow focal plane arrays based on the solid solution of mercury–cadmium–telluride

Solyakov V.N., Bochkov V.D., Drazhnikov B.N., Kuznetsov P.A., Kozlov K.V.

(Eng)

Vol 62, No 9 (2017)

Selective UV photodetectors based on the metal–AlGaN Schottky barrier

Tarasov S.A., Lamkin I.A., Mikhailov I.I., Evseenkov A.S., Solomonov A.V.

(Eng)

Vol 61, No 3 (2016)

320 × 256 avalanche array photodetector on the basis of ternary alloys of the A₃B₅ group with an InGaAs absorbing layer and an InAlAs barrier layer

Iakovleva N.I., Boltar K.O., Sedneva M.V., Lopukhin A.A., Korotaev E.D.

(Eng)

Vol 62, No 9 (2017)

Analysis of characteristics of photodetectors based on InGaAs heteroepitaxial structures for 3D imaging

Iakovleva N.I., Boltar K.O., Sednev M.V., Nikonov A.V.

(Eng)

Vol 62, No 3 (2017)

Analysis of the nBn-type barrier structures for infrared photodiode detectors

Voitsekhovskii A.V., Gorn D.I.

(Eng)

Vol 62, No 3 (2017)

A 1280 × 1024 CMOS visible-range photodetector chip with a pixel size of 13 × 13 μm

Borodin D.V., Osipov Y.V., Vasil’ev V.V.

(Eng)

Vol 64, No 9 (2019)

Analysis of Current–Voltage Characteristics in UV AlGaN Heterostructure FPAs

Iakovleva N.I., Nikonov A., Boltar K.O., Sednev M.V.

(Eng)

Vol 62, No 3 (2017)

Methods for measuring the current–voltage characteristics of photodiodes in a multirow infrared photodetector

Baliev D.L., Boltar K.O.

(Eng)

Vol 64, No 9 (2019)

Focal Plane Array Based on the InGaAs/InP Heterostructure for 3D Imaging in Short-Wave IR Range

Burlakov I.D., Kuznetsov P.A., Moshchev I.S., Boltar K.O., Yakovleva N.I.

(Eng)

Vol 61, No 10 (2016)

Advantages of solid-state photodetectors for a spectral interval of 1.4–1.7 μm in night-vision devices

Gusarova N.I., Koshchavtsev N.F., Popov S.V.

(Eng)

Vol 63, No 9 (2018)

Multi-Row Photodetectors for the Short Wavelength IR Region Based on HgCdTe Heteroepitaxial Structures

Iakovleva N.I., Boltar K.O., Nikonov A.V., Egorov A.V.

(Eng)

Vol 61, No 10 (2016)

Comparative analysis of readout large-scale integrated circuits with an analog-to-digital converter in the cell for a photodetector of the far infrared range

Kuznetsov P.A., Moshchev I.S.

(Eng)

1 - 13 of 13 Items

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