Epitaxial structures for InGaAs/InP avalanche photodiodes
- Authors: Budtolaev A.K.1, Khakuashev P.E.1, Chinareva I.V.1, Gorlachuk P.V.2, Ladugin M.A.2, Marmaluk A.A.2, Ryaboshtan Y.L.2, Yarotskaya I.V.2
-
Affiliations:
- Orion Research and Production Association
- Polyus Research Institute
- Issue: Vol 62, No 3 (2017)
- Pages: 304-308
- Section: Articles from the Russian Journal Prikladnaya Fizika
- URL: https://journals.rcsi.science/1064-2269/article/view/198117
- DOI: https://doi.org/10.1134/S1064226917030056
- ID: 198117
Cite item
Abstract
The influence of parameters of the MOS hydride epitaxy on structural and electrophysical characteristics of InGaAs/InP heterostructures is studied experimentally. The chosen parameters are used to grow device structures and fabricate planar avalanche photodiodes based on them. The results of measuring of their photoelectrical properties suggest that the developed structures are suitable for fabrication of commercial planar avalanche photodiodes.
About the authors
A. K. Budtolaev
Orion Research and Production Association
Author for correspondence.
Email: orion@orion-ir.ru
Russian Federation, Moscow, 111538
P. E. Khakuashev
Orion Research and Production Association
Email: orion@orion-ir.ru
Russian Federation, Moscow, 111538
I. V. Chinareva
Orion Research and Production Association
Email: orion@orion-ir.ru
Russian Federation, Moscow, 111538
P. V. Gorlachuk
Polyus Research Institute
Email: orion@orion-ir.ru
Russian Federation, Moscow, 117342
M. A. Ladugin
Polyus Research Institute
Email: orion@orion-ir.ru
Russian Federation, Moscow, 117342
A. A. Marmaluk
Polyus Research Institute
Email: orion@orion-ir.ru
Russian Federation, Moscow, 117342
Yu. L. Ryaboshtan
Polyus Research Institute
Email: orion@orion-ir.ru
Russian Federation, Moscow, 117342
I. V. Yarotskaya
Polyus Research Institute
Email: orion@orion-ir.ru
Russian Federation, Moscow, 117342