作者的详细信息
Samartsev, I. V.
| 期 | 栏目 | 标题 | 文件 |
| 卷 51, 编号 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Technology of the production of laser diodes based on GaAs/InGaAs/AlGaAs structures grown on a Ge/Si substrate | |
| 卷 52, 编号 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Photodetectors with an InGaAs Active Region and InGaP Metamorphic Buffer Layer Grown on GaAs Substrates | |
| 卷 53, 编号 12 (2019) | Physics of Semiconductor Devices | GaAs-Based Laser Diode with InGaAs Waveguide Quantum Wells |