期 |
栏目 |
标题 |
文件 |
卷 50, 编号 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
卷 52, 编号 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
卷 52, 编号 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
卷 52, 编号 9 (2018) |
Physics of Semiconductor Devices |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
|
卷 53, 编号 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
卷 53, 编号 6 (2019) |
Physics of Semiconductor Devices |
Light-Emitting Diodes Based on an Asymmetrical InAs/InAsSb/InAsSbP Double Heterostructure for CO2 (λ = 4.3 μm) and CO (λ = 4.7 μm) Detection |
|