| 期 |
栏目 |
标题 |
文件 |
| 卷 50, 编号 9 (2016) |
Fabrication, Treatment, and Testing of Materials and Structures |
Growth features and spectroscopic structure investigations of nanoprofiled AlN films formed on misoriented GaAs substrates |
|
| 卷 51, 编号 9 (2017) |
Electronic Properties of Semiconductors |
Experimental studies of the effects of atomic ordering in epitaxial GaxIn1 – xP alloys on their optical properties |
|
| 卷 52, 编号 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of Misorientation and Preliminary Etching of the Substrate on the Structural and Optical Properties of Integrated GaAs/Si(100) Heterostructures Produced by Vapor Phase Epitaxy |
|
| 卷 52, 编号 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Effect of Conditions of Electrochemical Etching on the Morphological, Structural, and Optical Properties of Porous Gallium Arsenide |
|
| 卷 52, 编号 13 (2018) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Effect of a por-Si Buffer Layer on the Structure and Morphology of Epitaxial InxGa1 – xN/Si(111) Heterostructures |
|
| 卷 53, 编号 1 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Influence of a por-Si Buffer Layer on the Optical Properties of Epitaxial InxGa1 –xN/Si(111) Heterostructures with a Nanocolumnar Film Morphology |
|
| 卷 53, 编号 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Morphology and Optical Properties of Molybdenum Disulfide Nanostructures from a Monomolecular Layer to a Fractal-Like Substructure |
|
| 卷 53, 编号 7 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Investigation into the Influence of a Buffer Layer of Nanoporous Silicon on the Atomic and Electronic Structure and Optical Properties of AIIIN/por-Si Heterostructures Grown by Plasma-Activated Molecular-Beam Epitaxy |
|
| 卷 53, 编号 8 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
Structural and Morphological Properties of Hybrid Heterostructures Based on GaN Grown on a Compliant por-Si(111) Substrate |
|
