Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices
- 作者: Pavelyev D.1, Vasilev A.2, Kozlov V.1,3, Obolenskaya E.1
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隶属关系:
- Lobachevsky State University of Nizhny Novgorod
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- Institute for Physics of Microstructures, Russian Academy of Sciences
- 期: 卷 52, 编号 11 (2018)
- 页面: 1448-1456
- 栏目: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204416
- DOI: https://doi.org/10.1134/S1063782618110192
- ID: 204416
如何引用文章
详细
The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
作者简介
D. Pavelyev
Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: bess009@mail.ru
俄罗斯联邦, Nizhny Novgorod, 603950
A. Vasilev
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Email: bess009@mail.ru
俄罗斯联邦, St. Petersburg, 194021
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: bess009@mail.ru
俄罗斯联邦, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
俄罗斯联邦, Nizhny Novgorod, 603950