Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices
- Авторлар: Pavelyev D.1, Vasilev A.2, Kozlov V.1,3, Obolenskaya E.1
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Мекемелер:
- Lobachevsky State University of Nizhny Novgorod
- Submicron Heterostructures for Microelectronics, Research and Engineering Center, Russian Academy of Sciences
- Institute for Physics of Microstructures, Russian Academy of Sciences
- Шығарылым: Том 52, № 11 (2018)
- Беттер: 1448-1456
- Бөлім: Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018
- URL: https://journals.rcsi.science/1063-7826/article/view/204416
- DOI: https://doi.org/10.1134/S1063782618110192
- ID: 204416
Дәйексөз келтіру
Аннотация
The radiation resistance to the gamma-neutron irradiation (~1 MeV) of diodes based on symmetric GaAs/AlAs 30-period superlattices is for the first time studied theoretically and experimentally. The model band diagram and equivalent circuit of the structure under study are used in calculations. Calculations are performed in the quasi-hydrodynamic approximation taking into account the heating of diodes under study by flowing current. The results of calculating the current–voltage characteristics and limiting operating frequencies of the diodes before and after gamma-neutron irradiation correlate well with the experimental data.
Авторлар туралы
D. Pavelyev
Lobachevsky State University of Nizhny Novgorod
Хат алмасуға жауапты Автор.
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950
A. Vasilev
Submicron Heterostructures for Microelectronics, Research and Engineering Center,Russian Academy of Sciences
Email: bess009@mail.ru
Ресей, St. Petersburg, 194021
V. Kozlov
Lobachevsky State University of Nizhny Novgorod; Institute for Physics of Microstructures, Russian Academy of Sciences
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950; Nizhny Novgorod, 603087
E. Obolenskaya
Lobachevsky State University of Nizhny Novgorod
Email: bess009@mail.ru
Ресей, Nizhny Novgorod, 603950