Impurity levels in Hg3In2Te6 crystals
- 作者: Chupyra S.1, Grushka O.1, Bilichuk S.1
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隶属关系:
- Chernivtsy National University
- 期: 卷 51, 编号 8 (2017)
- 页面: 1041-1043
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200978
- DOI: https://doi.org/10.1134/S1063782617080061
- ID: 200978
如何引用文章
详细
The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy EF(T). The dependences n(T) and EF(T) are obtained from data on the Hall coefficient R(T) and the thermopower α(T). Differential analysis of the dependences n(T) shows that, under variations in the degree of compensation by heat treatment of the samples, a wider spectrum of impurity levels in the band gap of Hg3In2Te6 can be analyzed.
作者简介
S. Chupyra
Chernivtsy National University
Email: o.grushka@chnu.edu.ua
乌克兰, Chernivtsy, 58000
O. Grushka
Chernivtsy National University
编辑信件的主要联系方式.
Email: o.grushka@chnu.edu.ua
乌克兰, Chernivtsy, 58000
S. Bilichuk
Chernivtsy National University
Email: o.grushka@chnu.edu.ua
乌克兰, Chernivtsy, 58000