Impurity levels in Hg3In2Te6 crystals
- Авторлар: Chupyra S.1, Grushka O.1, Bilichuk S.1
-
Мекемелер:
- Chernivtsy National University
- Шығарылым: Том 51, № 8 (2017)
- Беттер: 1041-1043
- Бөлім: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/200978
- DOI: https://doi.org/10.1134/S1063782617080061
- ID: 200978
Дәйексөз келтіру
Аннотация
The parameters of impurity levels in Hg3In2Te6 samples are studied using the temperature dependences of the electron concentration n(T) and the Fermi-level energy EF(T). The dependences n(T) and EF(T) are obtained from data on the Hall coefficient R(T) and the thermopower α(T). Differential analysis of the dependences n(T) shows that, under variations in the degree of compensation by heat treatment of the samples, a wider spectrum of impurity levels in the band gap of Hg3In2Te6 can be analyzed.
Авторлар туралы
S. Chupyra
Chernivtsy National University
Email: o.grushka@chnu.edu.ua
Украина, Chernivtsy, 58000
O. Grushka
Chernivtsy National University
Хат алмасуға жауапты Автор.
Email: o.grushka@chnu.edu.ua
Украина, Chernivtsy, 58000
S. Bilichuk
Chernivtsy National University
Email: o.grushka@chnu.edu.ua
Украина, Chernivtsy, 58000