电邮这篇文章 On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates
- 作者: Aleshkin V.1,2, Baidus N.3, Dubinov A.1,2, Krasilnik Z.1,2, Nekorkin S.1,3, Novikov A.1,2, Rykov A.3, Yurasov D.1,2, Yablonskiy A.1
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隶属关系:
- Institute for Physics of Microstructures
- Lobachevsky State University of Nizhny Novgorod
- Physical-Technical Research Institute
- 期: 卷 51, 编号 5 (2017)
- 页面: 663-666
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/199921
- DOI: https://doi.org/10.1134/S1063782617050037
- ID: 199921
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详细
GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm2, respectively.
作者简介
V. Aleshkin
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
N. Baidus
Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. Dubinov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
编辑信件的主要联系方式.
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
Z. Krasilnik
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
S. Nekorkin
Institute for Physics of Microstructures; Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23/3, Nizhny Novgorod, 603950
A. Novikov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. Rykov
Physical-Technical Research Institute
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, pr. Gagarina 23/3, Nizhny Novgorod, 603950
D. Yurasov
Institute for Physics of Microstructures; Lobachevsky State University of Nizhny Novgorod
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950; pr. Gagarina 23, Nizhny Novgorod, 603950
A. Yablonskiy
Institute for Physics of Microstructures
Email: sanya@ipm.sci-nnov.ru
俄罗斯联邦, ul. Ul’yanova 46, Nizhny Novgorod, 603950
