On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

V. Ya. Aleshkin; N. V. Baidus; A. A. Dubinov; Z. F. Krasilnik; S. M. Nekorkin; A. V. Novikov; A. V. Rykov; D. V. Yurasov; A. N. Yablonskiy

doi:10.1134/S1063782617050037

On the stimulated emission of InGaAs/GaAs/AlGaAs laser structures grown by MOCVD on exact and inclined Ge/Si(001) substrates

Авторлар: Aleshkin V.¹^,2, Baidus N.³, Dubinov A.¹^,2, Krasilnik Z.¹^,2, Nekorkin S.¹^,3, Novikov A.¹^,2, Rykov A.³, Yurasov D.¹^,2, Yablonskiy A.¹
Мекемелер:
1. Institute for Physics of Microstructures
2. Lobachevsky State University of Nizhny Novgorod
3. Physical-Technical Research Institute
Шығарылым: Том 51, № 5 (2017)
Беттер: 663-666
Бөлім: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/199921
DOI: https://doi.org/10.1134/S1063782617050037
ID: 199921

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Аннотация

GaAs/AlGaAs laser structures with InGaAs quantum wells are grown by metal-organic chemical vapor deposition (MOCVD) on exact Si(001) substrates and substrates inclined by 4° to the [011] axis with a relaxed Ge buffer layer, emitting in the transparency region of bulk silicon (the wavelength is longer than 1100 nm at room temperature). The threshold power densities of stimulated emission, observed for the structures grown on exact and inclined substrates are 45 and 37 kW/cm², respectively.