Low-temperature conductivity of gadolinium sulfides
- 作者: Mustafaeva S.1, Asadov S.2
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隶属关系:
- Institute of Physics
- Institute of Catalysis and Inorganic Chemistry
- 期: 卷 50, 编号 9 (2016)
- 页面: 1137-1140
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197790
- DOI: https://doi.org/10.1134/S1063782616090177
- ID: 197790
如何引用文章
详细
In samples of GdSx (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdSx phases is established. The parameters of localized states in GdSx are determined.
作者简介
S. Mustafaeva
Institute of Physics
编辑信件的主要联系方式.
Email: solmust@gmail.com
阿塞拜疆, Baku, Az-1143
S. Asadov
Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
阿塞拜疆, Baku, Az-1143