Low-temperature conductivity of gadolinium sulfides
- Autores: Mustafaeva S.1, Asadov S.2
-
Afiliações:
- Institute of Physics
- Institute of Catalysis and Inorganic Chemistry
- Edição: Volume 50, Nº 9 (2016)
- Páginas: 1137-1140
- Seção: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197790
- DOI: https://doi.org/10.1134/S1063782616090177
- ID: 197790
Citar
Resumo
In samples of GdSx (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdSx phases is established. The parameters of localized states in GdSx are determined.
Sobre autores
S. Mustafaeva
Institute of Physics
Autor responsável pela correspondência
Email: solmust@gmail.com
Azerbaijão, Baku, Az-1143
S. Asadov
Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Azerbaijão, Baku, Az-1143