Low-temperature conductivity of gadolinium sulfides
- Авторы: Mustafaeva S.1, Asadov S.2
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Учреждения:
- Institute of Physics
- Institute of Catalysis and Inorganic Chemistry
- Выпуск: Том 50, № 9 (2016)
- Страницы: 1137-1140
- Раздел: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197790
- DOI: https://doi.org/10.1134/S1063782616090177
- ID: 197790
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Аннотация
In samples of GdSx (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdSx phases is established. The parameters of localized states in GdSx are determined.
Об авторах
S. Mustafaeva
Institute of Physics
Автор, ответственный за переписку.
Email: solmust@gmail.com
Азербайджан, Baku, Az-1143
S. Asadov
Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Азербайджан, Baku, Az-1143