Low-temperature conductivity of gadolinium sulfides
- Authors: Mustafaeva S.N.1, Asadov S.M.2
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Affiliations:
- Institute of Physics
- Institute of Catalysis and Inorganic Chemistry
- Issue: Vol 50, No 9 (2016)
- Pages: 1137-1140
- Section: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/197790
- DOI: https://doi.org/10.1134/S1063782616090177
- ID: 197790
Cite item
Abstract
In samples of GdSx (x = 1.475–2) of various compositions, the conductivity temperature dependences are investigated for the case of direct current in the low-temperature region (4.2–225 K). The presence of the activation and activationless hopping mechanisms of charge transport over the band gap of the samples of GdSx phases is established. The parameters of localized states in GdSx are determined.
About the authors
S. N. Mustafaeva
Institute of Physics
Author for correspondence.
Email: solmust@gmail.com
Azerbaijan, Baku, Az-1143
S. M. Asadov
Institute of Catalysis and Inorganic Chemistry
Email: solmust@gmail.com
Azerbaijan, Baku, Az-1143