Relaxation oscillations of superluminescence in a semiconductor caused by recovery of the Fermi distribution of nonequilibrium electrons
- 作者: Kumekov S.1, Mustafin A.1, Mussatay S.1
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隶属关系:
- Kazakh National Technical University
- 期: 卷 50, 编号 4 (2016)
- 页面: 453-456
- 栏目: Spectroscopy, Interaction with Radiation
- URL: https://journals.rcsi.science/1063-7826/article/view/196969
- DOI: https://doi.org/10.1134/S106378261604014X
- ID: 196969
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详细
It is shown that modulation of the superluminescence intensity on a characteristic time scale on the order of a few picoseconds may occur in a semiconductor because of relaxation oscillations that result from the “healing” of local perturbations of the quasi-Fermi distribution of nonequilibrium electrons in energy space. The conditions for observing this effect in GaAs are estimated.
作者简介
S. Kumekov
Kazakh National Technical University
编辑信件的主要联系方式.
Email: skumekov@mail.ru
哈萨克斯坦, Almaty, 050013
A. Mustafin
Kazakh National Technical University
Email: skumekov@mail.ru
哈萨克斯坦, Almaty, 050013
S. Mussatay
Kazakh National Technical University
Email: skumekov@mail.ru
哈萨克斯坦, Almaty, 050013