On the thermoelectric properties and band gap of silicon–germanium alloys in the high-temperature region
- 作者: Inglizian P.1, Mikheyev V.1, Novinkov V.1, Shchedrov E.1
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隶属关系:
- LLC “ERA–SPhTI”
- 期: 卷 50, 编号 4 (2016)
- 页面: 447-448
- 栏目: Electronic Properties of Semiconductors
- URL: https://journals.rcsi.science/1063-7826/article/view/196959
- DOI: https://doi.org/10.1134/S1063782616040126
- ID: 196959
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详细
For n- and p-type Si0.85Ge0.15 alloys, the thermoelectric properties (thermopower, resistivity, thermal conductivity, and thermoelectric efficiency) are determined in the range from room temperature to 1200°C. The measurements are carried out with an upgraded device [1] by absolute and steady-state methods with thermal screens. The device is upgraded to extend the working-temperature range to ~1500 K. On the basis of these data, the energy-related capabilities of the alloy are estimated; the thermal band-gap width is calculated in the temperature range of ~1300–1400 K.
作者简介
P. Inglizian
LLC “ERA–SPhTI”
编辑信件的主要联系方式.
Email: sfti-era@mail.ru
格鲁吉亚, Sukhum, Abkhazia, 354000
V. Mikheyev
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
格鲁吉亚, Sukhum, Abkhazia, 354000
V. Novinkov
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
格鲁吉亚, Sukhum, Abkhazia, 354000
E. Shchedrov
LLC “ERA–SPhTI”
Email: sfti-era@mail.ru
格鲁吉亚, Sukhum, Abkhazia, 354000