Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
- 作者: Kalyadin A.1, Sobolev N.1, Strel’chuk A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1
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隶属关系:
- Ioffe Physical–Technical Institute
- 期: 卷 50, 编号 2 (2016)
- 页面: 249-251
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196810
- DOI: https://doi.org/10.1134/S1063782616020111
- ID: 196810
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详细
SiGe-based n+–p–p+ light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.
作者简介
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
N. Sobolev
Ioffe Physical–Technical Institute
编辑信件的主要联系方式.
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
A. Strel’chuk
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
俄罗斯联邦, St. Petersburg, 194021