Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
- Авторы: Kalyadin A.1, Sobolev N.1, Strel’chuk A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1
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Учреждения:
- Ioffe Physical–Technical Institute
- Выпуск: Том 50, № 2 (2016)
- Страницы: 249-251
- Раздел: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196810
- DOI: https://doi.org/10.1134/S1063782616020111
- ID: 196810
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Аннотация
SiGe-based n+–p–p+ light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.
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Об авторах
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
N. Sobolev
Ioffe Physical–Technical Institute
Автор, ответственный за переписку.
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
A. Strel’chuk
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Россия, St. Petersburg, 194021