Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
- Autores: Kalyadin A.1, Sobolev N.1, Strel’chuk A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1
-
Afiliações:
- Ioffe Physical–Technical Institute
- Edição: Volume 50, Nº 2 (2016)
- Páginas: 249-251
- Seção: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196810
- DOI: https://doi.org/10.1134/S1063782616020111
- ID: 196810
Citar
Resumo
SiGe-based n+–p–p+ light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.
Palavras-chave
Sobre autores
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
N. Sobolev
Ioffe Physical–Technical Institute
Autor responsável pela correspondência
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
A. Strel’chuk
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Rússia, St. Petersburg, 194021