Effect of the fabrication conditions of SiGe LEDs on their luminescence and electrical properties
- Авторлар: Kalyadin A.1, Sobolev N.1, Strel’chuk A.1, Aruev P.1, Zabrodskiy V.1, Shek E.1
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Мекемелер:
- Ioffe Physical–Technical Institute
- Шығарылым: Том 50, № 2 (2016)
- Беттер: 249-251
- Бөлім: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196810
- DOI: https://doi.org/10.1134/S1063782616020111
- ID: 196810
Дәйексөз келтіру
Аннотация
SiGe-based n+–p–p+ light-emitting diodes (LEDs) with heavily doped layers fabricated by the diffusion (of boron and phosphorus) and CVD (chemical-vapor deposition of polycrystalline silicon layers doped with boron and phosphorus) techniques are studied. The electroluminescence spectra of both kinds of LEDs are identical, but the emission intensity of CVD diodes is ∼20 times lower. The reverse and forward currents in the CVD diodes are substantially higher than those in diffusion-grown diodes. The poorer luminescence and electrical properties of the CVD diodes are due to the formation of defects at the interface between the emitter and base layers.
Негізгі сөздер
Авторлар туралы
A. Kalyadin
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
N. Sobolev
Ioffe Physical–Technical Institute
Хат алмасуға жауапты Автор.
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
A. Strel’chuk
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
P. Aruev
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
V. Zabrodskiy
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021
E. Shek
Ioffe Physical–Technical Institute
Email: nick@sobolev.ioffe.rssi.ru
Ресей, St. Petersburg, 194021