Photodetectors based on CuInS2
- 作者: Vostretsova L.1, Gavrilov S.2, Bulyarsky S.1
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隶属关系:
- Ulyanovsk State University
- National Research University of Electronic Technology “MIET”
- 期: 卷 50, 编号 1 (2016)
- 页面: 106-111
- 栏目: Physics of Semiconductor Devices
- URL: https://journals.rcsi.science/1063-7826/article/view/196697
- DOI: https://doi.org/10.1134/S1063782616010061
- ID: 196697
如何引用文章
详细
It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS2 and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 1016 cm–2.
作者简介
L. Vostretsova
Ulyanovsk State University
Email: Kapiton04@yandex.ru
俄罗斯联邦, Ulyanovsk, 432017
S. Gavrilov
National Research University of Electronic Technology “MIET”
Email: Kapiton04@yandex.ru
俄罗斯联邦, Moscow, Zelenograd, 124498
S. Bulyarsky
Ulyanovsk State University
编辑信件的主要联系方式.
Email: Kapiton04@yandex.ru
俄罗斯联邦, Ulyanovsk, 432017