Photodetectors based on CuInS2

Аннотация

It is shown that the processes of charge-carrier transport, which determine the “dark” current–voltage characteristics of photodetectors based on CuInS₂ and, consequently, the efficiency of light conversion, are of the tunneling–recombination type. These processes occur via electronic states within the band gap with an activation energy of 0.2 eV and a concentration on the order of 8 × 10¹⁶ cm^–2.