Информация об авторе
Mansurov, V.
| Выпуск | Раздел | Название | Файл |
| Том 50, № 2 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Influence of defects on the photoluminescence kinetics in GaN/AlN quantum-dot structures | |
| Том 50, № 8 (2016) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Photoluminescence kinetics slowdown in an ensemble of GaN/AlN quantum dots upon tunneling interaction with defects | |
| Том 51, № 3 (2017) | Physics of Semiconductor Devices | AlN/GaN heterostructures for normally-off transistors | |
| Том 52, № 6 (2018) | Fabrication, Treatment, and Testing of Materials and Structures | Effect of the Sapphire-Nitridation Level and Nucleation-Layer Enrichment with Aluminum on the Structural Properties of AlN Layers | |
| Том 52, № 12 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Formation of a Graphene-Like SiN Layer on the Surface Si(111) |