Информация об авторе
Abdullayev, N. A.
| Выпуск | Раздел | Название | Файл |
| Том 51, № 4 (2017) | Fabrication, Treatment, and Testing of Materials and Structures | In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers | |
| Том 51, № 5 (2017) | Electronic Properties of Semiconductors | Ab initio calculations of phonon dispersion in CdGa2Se4 | |
| Том 51, № 7 (2017) | Electronic Properties of Semiconductors | Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals | |
| Том 53, № 2 (2019) | Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors | Optical Properties of Polyethylene Filled with Bi2Te3 Nanocrystallites | |
| Том 53, № 3 (2019) | Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) | Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals | |
| Том 53, № 7 (2019) | Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena | Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |