| Шығарылым |
Бөлім |
Атауы |
Файл |
| Том 51, № 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
In As1–xSbx heteroepitaxial structures on compositionally graded GaInSb and AlGaInSb buffer layers |
|
| Том 51, № 5 (2017) |
Electronic Properties of Semiconductors |
Ab initio calculations of phonon dispersion in CdGa2Se4 |
|
| Том 51, № 7 (2017) |
Electronic Properties of Semiconductors |
Effect of doping with rare-earth elements (Eu, Tb, Dy) on the conductivity of Bi2Te3 layered single crystals |
|
| Том 53, № 2 (2019) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Optical Properties of Polyethylene Filled with Bi2Te3 Nanocrystallites |
|
| Том 53, № 3 (2019) |
Nonelectronic Properties of Semiconductors (Atomic Structure, Diffusion) |
Anharmonicity of Lattice Vibrations in Bi2Se3 Single Crystals |
|
| Том 53, № 7 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Optical Properties of Unrelaxed InAs1 –xSbx Heteroepitaxial Structures |
|
