| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 3 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and Photoelectric Properties of the TiN/p-InSe Heterojunction |
|
| Том 50, № 8 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical and photoelectric properties of n-TiN/p-Hg3In2Te6 heterostructures |
|
| Том 51, № 3 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Temperature dependences of the electrical parameters of anisotype NiO/CdTe heterojunctions |
|
| Том 51, № 4 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Silicon nanowire array architecture for heterojunction electronics |
|
| Том 52, № 2 (2018) |
Physics of Semiconductor Devices |
Graphite/p-SiC Schottky Diodes Prepared by Transferring Drawn Graphite Films onto SiC |
|
| Том 52, № 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electrical Properties of p-NiO/n-Si Heterostructures Based on Nanostructured Silicon |
|
| Том 52, № 9 (2018) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Electrical Properties and Energy Parameters of n-FeS2/p-Cd1 –xZnxTe Heterojunctions |
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