| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
Enhancement of the spectral sensitivity of photodiodes for the mid-IR spectral range |
|
| Том 51, № 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Том 52, № 8 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Photoconductivity Amplification in a Type-II n-GaSb/InAs/p-GaSb Heterostructure with a Single QW |
|
| Том 52, № 9 (2018) |
Physics of Semiconductor Devices |
GaSb/GaAlAsSb Heterostructure Photodiodes for the Near-IR Spectral Range |
|
| Том 53, № 1 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Electroluminescence in n-GaSb/InAs/p-GaSb Heterostructures with a Single Quantum Well Grown by MOVPE |
|
