| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 3 (2016) |
Surfaces, Interfaces, and Thin Films |
Role of Acoustoelectric Interaction in the Formation of Nanoscale Periodic Structures of Adsorbed Atoms |
|
| Том 50, № 6 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Features of high-temperature electroluminescence in an LED n-GaSb/n-InGaAsSb/p-AlGaAsSb heterostructure with high potential barriers |
|
| Том 51, № 4 (2017) |
Microcrystalline, Nanocrystalline, Porous, and Composite Semiconductors |
Sensitivity of energy-packed compounds based on superfine and nanoporous silicon to pulsed electrical treatments |
|
| Том 51, № 9 (2017) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Effect of electrostatic shielding on the photoelectric properties of heterostructures with deep QWs |
|
| Том 52, № 2 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Intraband Radiation Absorption by Holes in InAsSb/AlSb and InGaAsP/InP Quantum Wells |
|
| Том 52, № 4 (2018) |
XXV International Symposium “Nanostructures: Physics and Technology”, Saint Petersburg, June 26–30, 2017. Quantum Wells, Quantum Wires, Quantum Dots, and Band Structure |
Enhancement of Photoconductivity by Carrier Screening Effect in n-GaSb/InAs/p-GaSb Heterostructure with Single Deep Quantum Well |
|
| Том 53, № 2 (2019) |
Fabrication, Treatment, and Testing of Materials and Structures |
On the Possibility of Manufacturing Strained InAs/GaSb Superlattices by the MOCVD Method |
|
| Том 53, № 4 (2019) |
Spectroscopy, Interaction with Radiation |
Carrier Lifetime in Semiconductors with Band-Gap Widths Close to the Spin-Orbit Splitting Energies |
|
| Том 53, № 11 (2019) |
Surfaces, Interfaces, and Thin Films |
Mechanism of Singlet-Oxygen Generation on the Surface of Excited Nanoporous Silicon |
|
