Информация об авторе
Pavelyev, D. G.
| Выпуск | Раздел | Название | Файл |
| Том 50, № 11 (2016) | XX International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 14–18, 2016 | Simulation of electron transport in GaAs/AlAs superlattices with a small number of periods for the THz frequency range | |
| Том 51, № 11 (2017) | XXI International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 13–16, 2017 | Optimization of the superlattice parameters for THz diodes | |
| Том 52, № 11 (2018) | Xxii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 12–15, 2018 | Radiation Resistance of Terahertz Diodes Based on GaAs/AlAs Superlattices | |
| Том 53, № 9 (2019) | Xxiii International Symposium “Nanophysics and Nanoelectronics”, Nizhny Novgorod, March 11–14, 2019 | Comparison of the Features of Electron Transport and Subterahertz Generation in Diodes Based on 6-, 18-, 70-, and 120-Period GaAs/AlAs Superlattices |