| Выпуск |
Раздел |
Название |
Файл |
| Том 50, № 5 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of metamorphic GaAs/InAlGaAs/InGaAs heterostructures with InAs/InGaAs quantum wells, emitting light in the 1250–1400-nm spectral range |
|
| Том 50, № 5 (2016) |
Physics of Semiconductor Devices |
GaAs/InGaAsN heterostructures for multi-junction solar cells |
|
| Том 50, № 6 (2016) |
Physics of Semiconductor Devices |
Switching between the mode-locking and Q-switching modes in two-section QW lasers upon a change in the absorber properties due to the Stark effect |
|
| Том 50, № 8 (2016) |
Physics of Semiconductor Devices |
Optical properties of photodetectors based on single GaN nanowires with a transparent graphene contact |
|
| Том 50, № 9 (2016) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Optical properties of InGaAs/InGaAlAs quantum wells for the 1520–1580 nm spectral range |
|
| Том 50, № 10 (2016) |
Electronic Properties of Semiconductors |
Room-temperature operation of quantum cascade lasers at a wavelength of 5.8 μm |
|
| Том 50, № 10 (2016) |
Physics of Semiconductor Devices |
On the gain properties of “thin” elastically strained InGaAs/InGaAlAs quantum wells emitting in the near-infrared spectral region near 1550 nm |
|
| Том 51, № 2 (2017) |
Fabrication, Treatment, and Testing of Materials and Structures |
Study of the structural and optical properties of GaP(N) layers synthesized by molecular-beam epitaxy on Si(100) 4° substrates |
|
| Том 51, № 9 (2017) |
Electronic Properties of Semiconductors |
Optical properties of metamorphic hybrid heterostuctures for vertical-cavity surface-emitting lasers operating in the 1300-nm spectral range |
|
| Том 52, № 6 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Heterostructures of Single-Wavelength and Dual-Wavelength Quantum-Cascade Lasers |
|
| Том 52, № 7 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Experimental Study of Spontaneous Emission in Bragg Multiple- Quantum-Well Structures with InAs Single-Layer Quantum Wells |
|
| Том 52, № 8 (2018) |
Physics of Semiconductor Devices |
Room Temperature Lasing of Multi-Stage Quantum-Cascade Lasers at 8 μm Wavelength |
|
| Том 52, № 9 (2018) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
On the Impact of Barrier-Layer Doping on the Photoluminescence Efficiency of InGaAlAs/InGaAs/InP Strained-Layer Heterostructures |
|
| Том 52, № 14 (2018) |
Microcavity and Photonic Crystals |
Experimental Study of Spontaneous Emission in the Bragg Multiple Quantum Wells Structure of InAs Monolayers Embedded in a GaAs Matrix |
|
| Том 53, № 3 (2019) |
Semiconductor Structures, Low-Dimensional Systems, and Quantum Phenomena |
Spontaneous Emission and Lasing of a Two-Wavelength Quantum-Cascade Laser |
|
| Том 53, № 8 (2019) |
Physics of Semiconductor Devices |
Influence of Output Optical Losses on the Dynamic Characteristics of 1.55-μm Wafer-Fused Vertical-Cavity Surface-Emitting Lasers |
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