Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD
- Авторы: Danilov L.1, Levin R.1, Nevedomskyi V.1, Pushnyi B.1
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Учреждения:
- Ioffe Institute
- Выпуск: Том 53, № 16 (2019)
- Страницы: 2078-2081
- Раздел: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207590
- DOI: https://doi.org/10.1134/S1063782619120091
- ID: 207590
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Аннотация
This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.
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Об авторах
L. Danilov
Ioffe Institute
Автор, ответственный за переписку.
Email: danleon84@mail.ioffe.ru
Россия, St Petersburg
R. Levin
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Россия, St Petersburg
V. Nevedomskyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Россия, St Petersburg
B. Pushnyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Россия, St Petersburg