Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD
- Авторлар: Danilov L.1, Levin R.1, Nevedomskyi V.1, Pushnyi B.1
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Мекемелер:
- Ioffe Institute
- Шығарылым: Том 53, № 16 (2019)
- Беттер: 2078-2081
- Бөлім: Nanostructures Technology
- URL: https://journals.rcsi.science/1063-7826/article/view/207590
- DOI: https://doi.org/10.1134/S1063782619120091
- ID: 207590
Дәйексөз келтіру
Аннотация
This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.
Негізгі сөздер
Авторлар туралы
L. Danilov
Ioffe Institute
Хат алмасуға жауапты Автор.
Email: danleon84@mail.ioffe.ru
Ресей, St Petersburg
R. Levin
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Ресей, St Petersburg
V. Nevedomskyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Ресей, St Petersburg
B. Pushnyi
Ioffe Institute
Email: danleon84@mail.ioffe.ru
Ресей, St Petersburg