Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

L. V. Danilov; R. V. Levin; V. N. Nevedomskyi; B. V. Pushnyi

doi:10.1134/S1063782619120091

Optical Properties of Short-Period InAs/GaSb Superlattices Grown by MOCVD

作者: Danilov L.V.¹, Levin R.V.¹, Nevedomskyi V.N.¹, Pushnyi B.V.¹
隶属关系:
1. Ioffe Institute
期: 卷 53, 编号 16 (2019)
页面: 2078-2081
栏目: Nanostructures Technology
URL: https://journals.rcsi.science/1063-7826/article/view/207590
DOI: https://doi.org/10.1134/S1063782619120091
ID: 207590

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This paper reports the structural and photoluminescent study results of heterostructure with short-period InAs/GaSb superlattice grown by MOCVD with 8/10 ML period thickness. The photoluminescence spectra was observed in the range of 3–5 μm with intensity peak at 3.8 μm. SL minibands theoretical calculation with a high accuracy confirmed the experimental data obtained. This indicates that the specified structural parameters match the chosen growth conditions.