Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO 2  Interface in a MOS Transistor

N. A. Kulikov; V. D. Popov

doi:10.1134/S1063782619010123

Effect of the Electric Mode and γ Irradiation on Surface-Defect Formation at the Si–SiO₂ Interface in a MOS Transistor

Авторы: Kulikov N.¹, Popov V.¹
Учреждения:
1. National Research Nuclear University “Moscow Engineering Physics Institute”
Выпуск: Том 53, № 1 (2019)
Страницы: 110-113
Раздел: Physics of Semiconductor Devices
URL: https://journals.rcsi.science/1063-7826/article/view/205629
DOI: https://doi.org/10.1134/S1063782619010123
ID: 205629

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Аннотация
Об авторах
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Аннотация

The results of experimental investigation into surface-defect formation under the effect of gamma-radiation with a dose rate P = 0.1 rad(Si)/s on MOS (metal-oxide-semiconductor) transistors with the n-type channel in the passive and active modes are presented. Two stages of surface-defect formation are observed. A qualitative model is proposed to explain the effect of the the drain transistor voltage on the defect formation process.

Об авторах

N. Kulikov

National Research Nuclear University “Moscow Engineering Physics Institute”

Email: wdpopov@mail.ru
Россия, Moscow, 115409

V. Popov